A Method for Heteroepitaxial Growth of Germanium on Silicon

Stanford Reference:

04-132

Abstract

Stanford researchers have patented a growth and anneal process for growing heteroepitaxial-germanium directly onto silicon. Low surface roughness and defects are confined near the Si/Ge interface, thus not threading to the surface as expected in this lattice mismatched system. This process creates defect-free, fully-relaxed, smooth, single crystal germanium layers on silicon without a graded buffer layer or any chemical-mechanical planarization. This technology simplifies heterogeneous integration of germanium CMOS and optoelectronic devices on silicon.

Applications

Ge MOSFETs with advanced high-K gate dielectric and metal gate integrated on Si Ge Photodetectors, Metal-Semiconductor-Metal (MSM) and p-i-n for optical interconnects
Ge based lasers integrated on Si
Bonding for Germanium on Insulator (GOI) fabrication and 3D applications
GaAs growth on CVD Ge for the eventual integration of Ge
Si and GaAs Ge/Si quantum well devices for DRAM, photonic and spintronic applications
Ge thin film photovoltaic devices
III-V on Si Tandem photovoltaic devices

Advantages

Simple, in-situ hydrogen anneal
No Chemical Mechanical Polishing (CMP) necessary
No thick SiGe Graded layer necessary
High purity epi-Ge achieved as compared to bulk germanium

Publications

A. Nayfeh, C. O. Chui, T. Yonehara and K. C. Saraswat, "Fabrication of high-quality p-MOSFET in Ge grown heteroepitaxially on Si," IEEE Electron Device Lett., Vol. 26, pp. 311-313, May 2005.
A. Nayfeh, C. O. Chui, . K. C. Saraswat and T. Yonehara, "Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality," Appl. Phys. Lett., Vol. 85, No. 14, pp. 2815-2817, 4 Oct. 2004

Innovators & Portfolio

Chi On Chui
Ammar Nayfeh
Krishna Saraswat more technologies from Krishna Saraswat »
Takao Yonehara

Patent Status

Date Released

9/14/2018 12:00

Licensing Contact

Evan Elder, Senior Licensing Associate
650-725-9558 (Mobile)
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Related Keywords

photodetector SiGe PS: semiconductor: CMOS (complementary metal oxide) GeOI (Germanium-on-insulator) PS: chemicals: germanium spintronics PS: semiconductor: manufacturing PS: communications: optical PS: communications: wireless PS: electronics: optoelectronic PS: photonics: silicon MOSFET 04-132 PS: semiconductor: processing DRAM PS: thin film

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